三维增材鞋面印花机对位平台的冗余驱动控制策略

针对自动鞋面印花机在进行对版时定位精度低,影响鞋面印刷质量的问题,提出了基于冗余驱动的印花机对位平台。在原有的三轴并联机构对位平台的基础上通过增加1个Y轴,有效地提高了对位平台Y向的刚度和承载能力,从而提高了印花机对位平台的定位精度。由于冗余驱动机构运动过程中存在机构运动耦合,利用几何法进行解耦,提出了基于电子凸轮的控制策略。同时提出了对机构换向间隙补偿的控制策略,进一步提高对位平台的定位精度,保证了鞋面的印刷质量。经过实验验证,改进后的印花机对位平台Y向定位精度提高了85.7%,Z向旋转定位精度提高了72.9%,X向和Y向换向间隙分别提高了50% 和75%,Z向旋转换向间隙提高了42.86%。     

金沙江上游水电站应对白格堰塞湖灾害的措施及经验

2018年10月、11月,西藏自治区昌都市江达县白格村两次发生山体滑坡造成金沙江断流并形成白格堰塞湖,给金沙江上游沿岸人民生产生活设施造成巨大安全威胁和超过百亿元的经济损失。华电金沙江上游水电开发有限公司组织所属企业及参建单位快速应对,采取撤离避让、工程防护、人工干预、生产恢复,推动后续处置、风险评估等措施,最大限度减轻了对金沙江上游叶巴滩、拉哇、巴塘、苏洼龙等在建水电站的灾害损失和后续影响,为类似灾害的处置提供借鉴经验。     

GaN中质子辐照损伤的分子动力学模拟研究

本文利用分子动力学方法研究了GaN在质子辐照下的损伤。对不同能量（1~10 keV）初级离位原子（PKA）引起的级联碰撞进行了研究，分析了点缺陷与PKA能量的关系、点缺陷随时间的演化规律、点缺陷的空间分布及点缺陷团簇的尺寸特征。研究结果表明，点缺陷的产生与PKA能量呈线性关系，不同类型的点缺陷随时间演化规律相似，点缺陷多产生在PKA径迹旁，点缺陷团簇多为孤立的点缺陷和小团簇。     

In‐plane shear damage behaviours of 2D needled C/SiC composites

Understanding the in‐plane shear behaviour of composites is essential to establish the design basis for practical applications. This study aims to investigate the shear damage behaviours of 2D needled C/SiC composites by various characterization techniques. The effect of layer arrangement on shear modulus and strength was discussed via shear stress‐strain responses. The shear strain field evolution and uniformity variation were studied by digital image correlation. It shows that the uniformity of shear strain field changes with the shear load, and the shear strain field evolution consist of 5 stages. The electrical resistivity measurement results indicate that structural deformation and damage evolution caused the electrical resistivity change. Furthermore, the damage evolution has a double effect on the electrical resistivity variation. The acoustic emission monitoring shows that the shear damage evolution is a 3‐stage nonlinear process before failure. The shear damages were categorized via acoustic characteristics. Besides, the postfailure behaviours were also discussed in this study.     

Simultaneous identification of structural stiffness and mass parameters based on Bare-bones Gaussian Tree Seeds Algorithm using time-domain data

This paper mainly illustrates the Tree Seeds Algorithm (TSA) to tackle structural damage identification problem. The damage model is simulated by the alterations of both stiffness and mass parameters. The objective function is introduced by minimizing the differences between the measured and calculated acceleration data. To enhance the performance of the standard TSA, two modifications including the bare-bones Gaussian updated mechanism and the withering process are introduced. The modified algorithm is named after the BGTSA. In the numerical simulation part, the BGTSA is firstly used to make comparisons with several state-of-the-art algorithms on the CEC05. Secondly, the BGTSA is utilized to deal with the structural damage identification problem by optimizing the acceleration-based nonlinear objective function. Numerical experiments involving a simply supported beam and a truss are carried out to verify the effectiveness of the proposed algorithm. The final results show that with low amount of acceleration data, the BGTSA can acquire better identification results compared with other evolutionary algorithms. Therefore the proposed algorithm could be viewed as a potential tool to solve the structural damage identification problem.     

Strain-rate dependence of surface/subsurface deformation mechanisms during nanoscratching tests of GGG single crystal

Constant- and varied-depth nanoscratching tests of GGG single crystal were carried out at different scratching velocities. The morphologies of the scratched grooves and chips were analysed using scanning electron microscope. The experimental results indicated that higher scratching velocity led to shallower penetration depth, shallower residual depth, and larger continuous chips. Increasing the scratching velocity could effectively improve the plasticity and reduce the brittle-to-ductile transition depth of GGG single crystal. Based on the contact stress and contact area between the analysed sample and Berkovich indenter, a model for predicting the penetration depth was developed, which took into account the strain rate effect and elastic recovery of materials. The model was verified using constant- and varied-depth nanoscratching tests, and the predicted and experimental results were in good agreement. Subsurface damage underneath the ductile surface was characterised using transmission electron microscope. The TEM results demonstrated that higher scratching velocity led to the slipping planes appearing in more directions, which prevented the generation of long slipping plane and reduced the depth of the damage layers. The plastic deformation of GGG at the scratching velocity of 100 μm/s was dominated by poly-crystalline nanocrystallites and amorphous phases, and was similar to that at the low scratching velocity. This study provided a fundamental understanding of the strain-rate dependence of surface/subsurface deformation mechanisms of GGG during ultra-precision machining.     

高熵合金的抗辐照性能研究进展

高熵合金作为一种新型多主元固溶体合金，成分复杂、全局无序，且具有多主元效应，表现出较为优异的综合性能，有望作为新型抗辐照结构材料应用于先进核能反应堆系统。本文介绍了目前高熵合金抗辐照性能的研究现状，主要涉及高熵合金辐照缺陷演化、微观结构变化和性能退化等辐照损伤演化过程，梳理了多主元效应对辐照损伤演化过程的影响规律。针对高熵合金的抗辐照性能研究，总结了目前高熵合金的几种抗辐照损伤机制，归纳了高熵合金抗辐照性能研究存在的问题，以及对高熵合金后续的研究方向进行了展望。     

瞬态闭锁试验在0.13 μm大规模集成电路中引起的潜在损伤

瞬态剂量率辐射试验会引起集成电路发生损伤或失效，其原因至少有两种：闭锁大电流引起的电路内部金属互连熔融；累积电离总剂量引起的氧化层电荷造成阈值电压偏移。本文以一种0.13 μm体硅CMOS处理器为对象，研究了瞬态剂量率和稳态电离总剂量辐射效应规律。结果表明：瞬态剂量率闭锁效应对处理器造成了显著的潜在损伤，导致其总剂量失效阈值从1 030 Gy(Si)降低至600 Gy(Si)。研究结论对于大规模集成电路的可靠性评估和指导辐射加固设计有重要参考意义。     

核电厂电气设备陶瓷部件受风生飞射物的冲击破坏

为研究沿海台风中的风生飞射物对核电厂电气设备的冲击破坏，以核电厂户外高压电气设备的陶瓷绝缘材料为研究对象，基于LS-DYNA和HyperMesh，分析陶瓷部件在小球和钢管打击下的破坏情况。结果表明：在受到钢管垂直打击时，陶瓷部件很容易发生破坏；在受到小球冲击时，陶瓷部件局部表面发生破坏。进一步计算得到小球对陶瓷部件的临界破坏冲击速度，可为后续设计和研究提供参考。     

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.